Major impacts of point defects and impurities on the carrier recombination dynamics in AlN

S. F. Chichibu, T. Onuma, K. Hazu, A. Uedono

研究成果: Article査読

31 被引用数 (Scopus)

抄録

Impacts of point defects and impurities on the carrier recombination dynamics in AlN are revealed by time-resolved spectroscopy and positron annihilation measurements. Intrinsically short low-temperature excitonic radiative lifetime (τR ∼10 ps) was elongated with the increase in Al-vacancy concentration up to 530 ps, irrespective of threading dislocation density. A continuous decrease in τR with temperature rise up to 200 K for heavily doped samples revealed the carrier release from the band-tail formed due to impurities and point defects. Because room-temperature nonradiative lifetime was equally short for all samples, high temperature growth with appropriate defect management is necessary in extracting radiative nature of AlN.

本文言語English
論文番号201904
ジャーナルApplied Physics Letters
97
20
DOI
出版ステータスPublished - 2010 11 15

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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