Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain

F. Matsukura, M. Sawicki, T. Dietl, D. Chiba, H. Ohno

研究成果: Conference article査読

123 被引用数 (Scopus)

抄録

Hall and sheet resistance of 200-nm thick metallic (Ga,Mn)As with compressive and tensile strain has been measured as a function of the magnetic field and temperature. The magnitude of resistance is found to depend rather strongly on relative orientations of magnetization and current and their directions in respect to crystal axes, the configuration corresponding to the highest resistance being different for compressive and tensile strain. Negative magnetoresistance, which is observed even if magnetization becomes saturated, is assigned to weak localization.

本文言語English
ページ(範囲)1032-1036
ページ数5
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
21
2-4
DOI
出版ステータスPublished - 2004 3月
イベントProceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan
継続期間: 2003 7月 142003 7月 18

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学

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