Hall and sheet resistance of 200-nm thick metallic (Ga,Mn)As with compressive and tensile strain has been measured as a function of the magnetic field and temperature. The magnitude of resistance is found to depend rather strongly on relative orientations of magnetization and current and their directions in respect to crystal axes, the configuration corresponding to the highest resistance being different for compressive and tensile strain. Negative magnetoresistance, which is observed even if magnetization becomes saturated, is assigned to weak localization.
|ジャーナル||Physica E: Low-Dimensional Systems and Nanostructures|
|出版ステータス||Published - 2004 3月|
|イベント||Proceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan|
継続期間: 2003 7月 14 → 2003 7月 18
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