The investigation of the magnetotransport properties of tunnel junction with the structure of Ta 5 nm/Cu 20 nm/Ta 5 nm/Ni76Fe242 nm/Cu 5 nm/Mn75Ir25 10 nm/Co71Fe29 4 nm/Al-N/Co71Fe29 4 nm/Ni76Fe24 20 nm/Ta 5 nm was discussed. The local transport properties were studied using conducting atomic force microscope for Ta 5 nm/Cu 20 nm/Ta 5 nm/Ni 76Fe24 2 nm/Cu 5 nm/Mn75Ir25 inorder to clarify the annealing temperature dependence of TMR ratio. The leakage current was observed and the TMR ratio decreased, after annealing at 340°C. Tunnel magnetoresistance ratio (TMR) at 300°C was elucidated.
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