Magnetotransport in p-type Ge quantum well narrow wire arrays

P. J. Newton, J. Llandro, R. Mansell, S. N. Holmes, C. Morrison, J. Foronda, M. Myronov, D. R. Leadley, C. H.W. Barnes

研究成果: Article査読

6 被引用数 (Scopus)

抄録

We report magnetotransport measurements of a SiGe heterostructure containing a 20 nm p-Ge quantum well with a mobility of 800 000 cm2 V-1 s-1. By dry etching arrays of wires with widths between 1.0 μm and 3.0 μm, we were able to measure the lateral depletion thickness, built-in potential, and the phase coherence length of the quantum well. Fourier analysis does not show any Rashba related spin-splitting despite clearly defined Shubnikov-de Haas oscillations being observed up to a filling factor of ν = 22. Exchange-enhanced spin-splitting is observed for filling factors below ν = 9. An analysis of boundary scattering effects indicates lateral depletion of the hole gas by 0.5 ± 0.1 μm from the etched germanium surface. The built-in potential is found to be 0.25 ± 0.04 V, presenting an energy barrier for lateral transport greater than the hole confinement energy. A large phase coherence length of 3.5 ± 0.5 μm is obtained in these wires at 1.7 K.

本文言語English
論文番号172102
ジャーナルApplied Physics Letters
106
17
DOI
出版ステータスPublished - 2015 4月 27
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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