TY - JOUR
T1 - Magnetostriction measurement of GMR films on practical substrates
AU - Okita, Kazuhiko
AU - Ishiyama, Kazushi
AU - Miura, Hideo
PY - 2010
Y1 - 2010
N2 - The magnetostriction constant λS of a magnetic film is usually measured by detecting the mechanical distortion of the film deposited on a thin glass substrate under an applied field using a laser beam. This method, however, cannot be applied to a film deposited on a rigid substrate such as Si and AlTiC used widely in real-world application. This is because that the distortion of the sample is too small to be detected. In addition, λS of the film deposited on the glass substrate sometimes differ from those of the film deposited on the Si or AlTiC substrate. Thus, it is very important to evaluate λS of a film deposited on an actual substrate. In this paper, a new method for measuring λS of a film deposited on a substrate used in actual products is proposed by detecting the change of the anisotropic field Hk of the film under bending load. λS can be calculated from the gradient of the applied mechanical stress dependence of the HK. Utilizing this method, we have successfully measured λS of GMR films fabricated on the practical substrate by a very high resolution of 2×10-8.
AB - The magnetostriction constant λS of a magnetic film is usually measured by detecting the mechanical distortion of the film deposited on a thin glass substrate under an applied field using a laser beam. This method, however, cannot be applied to a film deposited on a rigid substrate such as Si and AlTiC used widely in real-world application. This is because that the distortion of the sample is too small to be detected. In addition, λS of the film deposited on the glass substrate sometimes differ from those of the film deposited on the Si or AlTiC substrate. Thus, it is very important to evaluate λS of a film deposited on an actual substrate. In this paper, a new method for measuring λS of a film deposited on a substrate used in actual products is proposed by detecting the change of the anisotropic field Hk of the film under bending load. λS can be calculated from the gradient of the applied mechanical stress dependence of the HK. Utilizing this method, we have successfully measured λS of GMR films fabricated on the practical substrate by a very high resolution of 2×10-8.
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U2 - 10.1088/1742-6596/200/11/112008
DO - 10.1088/1742-6596/200/11/112008
M3 - Conference article
AN - SCOPUS:77957078409
SN - 1742-6588
VL - 200
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
IS - SECTION 11
M1 - 112008
ER -