Magnetoresistive switch effect and its application to magnetic field sensors

Zhi Gang Sun, Masaki Mizuguchi, Hiroyuki Akinaga

研究成果: Conference article

抜粋

Magnetoresistive switch effect (MRS effect) devices containing two gold (Au) electrodes with a gap less than 2 μm were successfully fabricated on semi-insulting GaAs substrates by wet etching method. Huge MRS effect was observed. Magnetoresistance (MR) ratio reached 1,000,000% under the magnetic filed of 1.5 T when the devices were operated just above the threshold voltage. The magnetic field sensitivity at small magnetic fields was significantly improved. MR ratio of more than 1000% was achieved at 0.03 T. A relative high MR ratio of 100,000% under the magnetic filed of 1.5 T was also achieved when the devices operating before the threshold voltage.

元の言語English
ページ(範囲)2223-2226
ページ数4
ジャーナルMaterials Science Forum
475-479
発行部数III
DOI
出版物ステータスPublished - 2005 1 1
イベントPRICM 5: The Fifth Pacific Rim International Conference on Advanced Materials and Processing - Beijing, China
継続期間: 2004 11 22004 11 5

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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