Magnetoresistance of FeCo nanocontacts with current-perpendicular-to-plane spin-valve structure

Hiromi Niu Fuke, Susumu Hashimoto, Masayuki Takagishi, Hitoshi Iwasaki, Shohei Kawasaki, Kousaku Miyake, Masashi Sahashi

研究成果: Article査読

45 被引用数 (Scopus)

抄録

We have achieved a magnetoresistance (MR) ratio of 7%-10% at a resistance area product (RA) of 0.5-1.5 Ωμm2 by ferromagnetic FeCo nanocontacts in Al nano-oxide-layer (NOL) with current-perpendicular-to-plane spin-valve (CPP-SV) structure. Conductive atomic-force-microscopy shows clear current-path regions of a few nanometers in size surrounded by the Al-NOL. The MR dependence on resistance area product (RA) is well explained by the current-confined-path model assuming that the spin-dependent scattering has an FeCo nanocontact origin, different from tunnel magnetoresistance (TMR). Resistance increases with increasing bias voltage, indicating joule heating by high-current density in nanocontacts, in contrast to TMR. The MR origin is mainly interpreted as spin-dependent scattering due to domain wall formed at ferromagnetic nanocontact.

本文言語English
ページ(範囲)2848-2850
ページ数3
ジャーナルIEEE Transactions on Magnetics
43
6
DOI
出版ステータスPublished - 2007 6月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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