Magnetoresistance effect in tunnel junctions with perpendicularly magnetized D022-Mn3-δGa electrode and MgO barrier

Takahide Kubota, Yoshio Miura, Daisuke Watanabe, Shigemi Mizukami, Feng Wu, Hiroshi Naganuma, Xianmin Zhang, Mikihiko Oogane, Masafumi Shirai, Yasuo Ando, Terunobu Miyazaki

研究成果: Article査読

50 被引用数 (Scopus)

抄録

The tunnel magnetoresistance (TMR) effect with a perpendicularly magnetized D022-Mn3-δsGa (δ = 0.6) electrode was investigated in epitaxially grown D022-Mn3-δGa (30)/Mg (dMg)/MgO (2)/CoFe (2.5) (nm) magnetic tunnel junctions (MTJs). The maximum TMR ratio of 9.8% (22.1%) was achieved at 300 K (10 K) with dMg = 0.4 nm. The bias voltage dependence of differential conductance spectra suggests the existence of a coherent tunneling process in the MTJs. First principles calculations of band dispersion relations and tunneling transmittance in a Mn3Ga/MgO/Mn3Ga structure were also performed. The results revealed the existence of Δ1-bands in Mn3Ga and demonstrated the possibility of a coherent tunneling process existing in the MTJ.

本文言語English
論文番号043002
ジャーナルApplied Physics Express
4
4
DOI
出版ステータスPublished - 2011 4

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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「Magnetoresistance effect in tunnel junctions with perpendicularly magnetized D0<sub>22</sub>-Mn<sub>3-δ</sub>Ga electrode and MgO barrier」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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