Magneto-electrical transport in V-patterned La0.7Sr 0.3MnO3 nanostructures

L. E. Calvet, G. Agnus, Y. Vaheb, Y. C. Lau, V. Pillard, Ph Lecoeur

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We investigate the electrical transport and magnetic field dependence of nano-patterned La0.7Sr0.3MnO3 devices. We find that the resistivity versus temperature dependence is the same as that observed in thin films, indicating that our nano-patterning preserves the fundamental properties of the material. At temperatures below 20 K there is resistivity upturn of ∼ 5 % in the smallest and thinnest device. Structures in a "V" pattern were fabricated in order to investigate domain wall resistance. We find a much smaller resistance area product as compared to previous reports observed in nanoconstrictions and also that the switching field matches that in micromagnetic simulations.

本文言語English
ページ(範囲)4600-4603
ページ数4
ジャーナルThin Solid Films
520
14
DOI
出版ステータスPublished - 2012 5月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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