Magneto-electrical transport in V-patterned La0.7Sr 0.3MnO3 nanostructures

L. E. Calvet; G. Agnus; Y. Vaheb; Y. C. Lau; V. Pillard; Ph Lecoeur

doi:10.1016/j.tsf.2011.11.071

Magneto-electrical transport in V-patterned La_0.7Sr _0.3MnO₃ nanostructures

L. E. Calvet, G. Agnus, Y. Vaheb, Y. C. Lau, V. Pillard, Ph Lecoeur

研究成果: Article › 査読

3 被引用数 (Scopus)

抄録

We investigate the electrical transport and magnetic field dependence of nano-patterned La_0.7Sr_0.3MnO₃ devices. We find that the resistivity versus temperature dependence is the same as that observed in thin films, indicating that our nano-patterning preserves the fundamental properties of the material. At temperatures below 20 K there is resistivity upturn of ∼ 5 % in the smallest and thinnest device. Structures in a "V" pattern were fabricated in order to investigate domain wall resistance. We find a much smaller resistance area product as compared to previous reports observed in nanoconstrictions and also that the switching field matches that in micromagnetic simulations.

本文言語	English
ページ（範囲）	4600-4603
ページ数	4
ジャーナル	Thin Solid Films
巻	520
号	14
DOI	https://doi.org/10.1016/j.tsf.2011.11.071
出版ステータス	Published - 2012 5月 1
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
表面および界面
表面、皮膜および薄膜
金属および合金
材料化学

文献へのアクセス

10.1016/j.tsf.2011.11.071

他のファイルとリンク

引用スタイル

@article{9caf611bd8a444e68de344c2b79d3fd2,

title = "Magneto-electrical transport in V-patterned La0.7Sr 0.3MnO3 nanostructures",

abstract = "We investigate the electrical transport and magnetic field dependence of nano-patterned La0.7Sr0.3MnO3 devices. We find that the resistivity versus temperature dependence is the same as that observed in thin films, indicating that our nano-patterning preserves the fundamental properties of the material. At temperatures below 20 K there is resistivity upturn of ∼ 5 % in the smallest and thinnest device. Structures in a {"}V{"} pattern were fabricated in order to investigate domain wall resistance. We find a much smaller resistance area product as compared to previous reports observed in nanoconstrictions and also that the switching field matches that in micromagnetic simulations.",

keywords = "Domain walls, Half metallic manganites, Magneto-resistance",

author = "Calvet, {L. E.} and G. Agnus and Y. Vaheb and Lau, {Y. C.} and V. Pillard and Ph Lecoeur",

note = "Funding Information: This research was partially funded by Triangle de la Physique (RTRA) contract MolSpinOx # 2008-022T and CNRS PICS#4276 .",

year = "2012",

month = may,

day = "1",

doi = "10.1016/j.tsf.2011.11.071",

language = "English",

volume = "520",

pages = "4600--4603",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "14",

}

TY - JOUR

T1 - Magneto-electrical transport in V-patterned La0.7Sr 0.3MnO3 nanostructures

AU - Calvet, L. E.

AU - Agnus, G.

AU - Vaheb, Y.

AU - Lau, Y. C.

AU - Pillard, V.

AU - Lecoeur, Ph

N1 - Funding Information: This research was partially funded by Triangle de la Physique (RTRA) contract MolSpinOx # 2008-022T and CNRS PICS#4276 .

PY - 2012/5/1

Y1 - 2012/5/1

N2 - We investigate the electrical transport and magnetic field dependence of nano-patterned La0.7Sr0.3MnO3 devices. We find that the resistivity versus temperature dependence is the same as that observed in thin films, indicating that our nano-patterning preserves the fundamental properties of the material. At temperatures below 20 K there is resistivity upturn of ∼ 5 % in the smallest and thinnest device. Structures in a "V" pattern were fabricated in order to investigate domain wall resistance. We find a much smaller resistance area product as compared to previous reports observed in nanoconstrictions and also that the switching field matches that in micromagnetic simulations.

AB - We investigate the electrical transport and magnetic field dependence of nano-patterned La0.7Sr0.3MnO3 devices. We find that the resistivity versus temperature dependence is the same as that observed in thin films, indicating that our nano-patterning preserves the fundamental properties of the material. At temperatures below 20 K there is resistivity upturn of ∼ 5 % in the smallest and thinnest device. Structures in a "V" pattern were fabricated in order to investigate domain wall resistance. We find a much smaller resistance area product as compared to previous reports observed in nanoconstrictions and also that the switching field matches that in micromagnetic simulations.

KW - Domain walls

KW - Half metallic manganites

KW - Magneto-resistance

UR - http://www.scopus.com/inward/record.url?scp=84860283280&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84860283280&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2011.11.071

DO - 10.1016/j.tsf.2011.11.071

M3 - Article

AN - SCOPUS:84860283280

VL - 520

SP - 4600

EP - 4603

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 14

ER -