Magnetically pinned ring dots for spin valve or magnetic tunnel junction memory cells

Ryoichi Nakatani, Tetsuo Yoshida, Yasushi Endo, Yoshio Kawamura, Masahiko Yamamoto, Takashi Takenaga, Sunao Aya, Takeharu Kuroiwa, Sadeh Beysen, Hiroshi Kobayashi

研究成果: Article査読

21 被引用数 (Scopus)

抄録

Ni-Fe/Mn-Ir asymmetric ring dots with partially planed outer sides are investigated in order to confirm a method for obtaining pinned layers in magnetic memories with asymmetric ring shapes. Magnetic force microscopy revealed that the direction of vortical magnetization is pinned in Ni-Fe/Mn-Ir asymmetric ring dots despite the direction of the magnetic fields. This investigation shows that the Ni-Fe/Mn-Ir asymmetric ring dots can be applied to pinned layers in magnetic memories with asymmetric ring shapes.

本文言語English
ページ(範囲)31-36
ページ数6
ジャーナルJournal of Magnetism and Magnetic Materials
286
SPEC. ISS.
DOI
出版ステータスPublished - 2005 2
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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