Magnetic tunnel junctions with high magnetoresistance and small bias voltage dependence using epitaxial NiFe(111) ferromagnetic bottom electrodes

Ji Hyung Yu, Hyuck Mo Lee, Masamitsu Hayashi, Mikihiko Oogane, Tadaomi Daibou, Hiroaki Nakamura, Hitoshi Kubota, Yasuo Ando, Terunobu Miyazaki

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Magnetic tunnel junctions (MTJ) were fabricated using Al-O insulating layers prepared on epitaxial Ni80Fe20 (NiFe) bottom electrode. Fewer defects were expected in an insulator grown on the epitaxial bottom electrode than one on the textured bottom electrode. The result indicated that output signals of the devices based on MTJ could be enhanced by improving insulating layer quality.

本文言語English
ページ(範囲)8555-8557
ページ数3
ジャーナルJournal of Applied Physics
93
10 3
DOI
出版ステータスPublished - 2003 5 15

ASJC Scopus subject areas

  • 物理学および天文学(全般)

フィンガープリント

「Magnetic tunnel junctions with high magnetoresistance and small bias voltage dependence using epitaxial NiFe(111) ferromagnetic bottom electrodes」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル