抄録

Magnetic tunnel junction (MTJ) device, a nonvolatile spintronic device, is capable of fast-read/write with high endurance together with back-end-of-the-line (BEOL) compatibility, offering a possibility of constructing not only stand-alone RAMs and embedded RAMs that can be used in conventional VLSI circuits and systems but also low-power high-performance nonvolatile CMOS logic employing logic-in-memory architecture. The advantages of employing MTJs with CMOS circuits are discussed and the current status of the MTJ technology is presented along with its prospect and remaining challenges.

本文言語English
ホスト出版物のタイトル2010 IEEE International Electron Devices Meeting, IEDM 2010
ページ9.4.1-9.4.4
DOI
出版ステータスPublished - 2010 12 1
イベント2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
継続期間: 2010 12 62010 12 8

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
ISSN(印刷版)0163-1918

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
国/地域United States
CitySan Francisco, CA
Period10/12/610/12/8

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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