Magnetic switching properties of magnetic tunnel junctions using a synthetic ferrimagnet free layer

T. Nozaki, Y. Jiang, H. Sukegawa, N. Tezuka, A. Hirohata, K. Inomata, S. Sugimoto

研究成果: Article査読

14 被引用数 (Scopus)

抄録

The magnetic switching properties of magnetic tunnel junctions (MTJ) using a synthetic ferrimagnet (SyF) free layer were studied. The free layers were deposited on a thermally oxidized Si substrate by an ultrahigh vacuum sputtering system. The tunneling magnetoresistance (TMR) curves were measured using a dc four probe method. It was observed that the SyF free layer showed a size independent switching field for all element widths from 0.25 to 16 μm. Large TMR ratio up to 40% was exhibited by the MTJs after annealing at 250 °C.

本文言語English
ページ(範囲)3745-3748
ページ数4
ジャーナルJournal of Applied Physics
95
7
DOI
出版ステータスPublished - 2004 4月 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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