The interesting features of equiatomic FeRh alloy with a magnetic phase transition exhibited around room temperature are very useful for micro electrical mechanical system (MEMS) devices. A few studies have been made for the preparation of the ordered FeRh thin films, and they succeeded in the preparation of well-defined films. However, the FeRh films have not been employed in any engineering applications. This is simply because such a sharp transition can only be realized with special conditions: the films deposited on quartz substrates should be annealed in vacuum at 1200°C, or a special substrate such as an MgO single crystal is required. The purpose of this study is the reduction of post annealing temperature to obtain the ordered structure and a relatively sharp magnetic transition on conventional glass or silicon wafer substrates, by using ion-beam sputtering.