Magnetic field dependence of threshold electric field for magnetoelectric switching of exchange-bias polarity

Thi Van Anh Nguyen, Yu Shiratsuchi, Atsushi Kobane, Saori Yoshida, Ryoichi Nakatani

研究成果: Article査読

14 被引用数 (Scopus)

抄録

We report the magnetic field dependence of the threshold electric field Eth for the magnetoelectric switching of the perpendicular exchange bias in Pt/Co/Au/Cr2O3/Pt stacked films using a reversible isothermal electric tuning approach. The Eth values for the positive-to-negative and negative-to-positive switching are different because of the unidirectional nature of the interfacial exchange coupling. The Eth values are inversely proportional to the magnetic-field strength, and the quantitative analysis of this relationship suggests that the switching is driven by the nucleation and growth of the antiferromagnetic domain. We also find that the magnetic-field dependence of Eth exhibits an offset electric field that might be related to the uncompensated antiferromagnetic moments located mainly at the interface.

本文言語English
論文番号073905
ジャーナルJournal of Applied Physics
122
7
DOI
出版ステータスPublished - 2017 8 21
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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