Magnetic-field-controllable avalanche breakdown and giant magnetoresistive effects in Gold/semi-insulating-GaAs Schottky diode

Z. G. Sun, M. Mizuguchi, T. Manago, H. Akinaga

研究成果: Article査読

70 被引用数 (Scopus)

抄録

Gold (Au)/semi-insulating (SI)-GaAs Schottky diode was fabricated by the standard photolithography method using wet etching. Magnetic-field-dependent avalanche breakdown phenomena were observed in the current-voltage curves measured under magnetic field. The avalanche breakdown due to impact ionization was postponed to higher electrical field under applied magnetic field. Accordingly, threshold voltages of avalanche breakdown increased with the applied magnetic field. Above 0.2 T, avalanche breakdown was totally quenched. When Au-SI-GaAs Schottky diode was operated above the threshold voltage, giant mangetoresistive effects up to 100 000% were achieved under magnetic field of 0.8 T.

本文言語English
ページ(範囲)5643-5645
ページ数3
ジャーナルApplied Physics Letters
85
23
DOI
出版ステータスPublished - 2004 12月 6
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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