Magnetic electron focusing effect in gaas/algaas heterostructure with gate-controlled byway channel

Shingo Inoue, Sadao Takaoka, Kazuhito Tsukagoshi, Kenichi Oto, Shigetoshi Wakayama, Kazuo Murase, Kenji Gamo

研究成果: Article査読

抄録

The magnetic electron focusing effect (MEFE) is investigated using a device with two extra probes connected by a gate-controlled byway channel. The focusing peak height is inversely proportional to the byway channel resistance. The results show that the focusing peaks are caused by the current through the byway. It is found that, at most, about 9% of the total current flows in the byway when the focusing effect occurs. Moreover, a countercurrent flows in the byway when the focusing effect does not occur.

本文言語English
ページ(範囲)4329-4331
ページ数3
ジャーナルJapanese journal of applied physics
34
8
DOI
出版ステータスPublished - 1995 8月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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