Magnetic, electrical properties, and structure of Cr-AlN and Mn-AlN thin films grown on Si substrates

Yasushi Endo, Takanobu Sato, Ayumu Takita, Yoshio Kawamura, Masahiko Yamamoto

研究成果: Article査読

22 被引用数 (Scopus)

抄録

We have studied magnetic, electrical properties, and structure of Cr-AlN and Mn-AlN thin films grown on the Si substrates. Each magnetic state in Al 0.93Cr0.07N and Al0.91Mn0.09N thin films changes from a paramagnetic state to a superparamagnetic state as temperature decreases. Room temperature (RT) ferromagnetism cannot be observed in each thin film. Each electrical property in Al0.93Cr 0.07N and Al0.91Mn0.09N thin films becomes semiconducting, since the electrical resistivities of these thin films are higher than 107μΩ·cm at RT. At 77 K, tunneling phenomena for the Al0.93Cr0.07N thin film and rectification for the Al0.91Mn0.09N thin film can be observed. Furthermore, the crystal structure in each thin film is also a polycrystalline structure with the preferential orientation of hep (0001).

本文言語English
ページ(範囲)2718-2720
ページ数3
ジャーナルIEEE Transactions on Magnetics
41
10
DOI
出版ステータスPublished - 2005 10月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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