We have studied magnetic, electrical properties, and structure of Cr-AlN and Mn-AlN thin films grown on the Si substrates. Each magnetic state in Al 0.93Cr0.07N and Al0.91Mn0.09N thin films changes from a paramagnetic state to a superparamagnetic state as temperature decreases. Room temperature (RT) ferromagnetism cannot be observed in each thin film. Each electrical property in Al0.93Cr 0.07N and Al0.91Mn0.09N thin films becomes semiconducting, since the electrical resistivities of these thin films are higher than 107μΩ·cm at RT. At 77 K, tunneling phenomena for the Al0.93Cr0.07N thin film and rectification for the Al0.91Mn0.09N thin film can be observed. Furthermore, the crystal structure in each thin film is also a polycrystalline structure with the preferential orientation of hep (0001).
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