Magnetic and Writing Properties of Clad Lines Used in a Toggle MRAM

K. Shimura, N. Ohshima, S. Miura, R. Nebashi, T. Suzuki, H. Hada, S. Tahara

研究成果: Article査読

5 被引用数 (Scopus)

抄録

We fabricated toggle magnetic random access memories with clad writing lines. First, we evaluated the structures and magnetic properties of sputter-deposited cladding layers. The substrate bias during the deposition affected not only the sidewall coverage, but also the crystallinity and magnetic properties of the cladding. The optimized clad lines reduced the writing current to as low as 50% of that of unclad lines. Moreover, the writing current deviation divided by the average current of magnetic tunnel junction cells with clad lines was as low as that with unclad lines. Using the optimized clad lines, we constructed memory arrays with a large operating margin and reduced switching current.

本文言語English
ページ(範囲)2736-2738
ページ数3
ジャーナルIEEE Transactions on Magnetics
42
10
DOI
出版ステータスPublished - 2006 10月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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