Magnetic and electrical properties of NiFe-oxide mixture films

Koichi Nishioka, Katsuya Mitsuoka, Hiroshi Fukui, Shinji Narishige, Moriaki Fuyama

研究成果: Article査読

4 被引用数 (Scopus)

抄録

In order to improve the performance of Magnetoresistive heads, higher saturation flux density Bs and higher resistivity p are preferable for Soft Adjacent Layer (SAL). NiFe-oxide (oxide= SiO2, Al2O3, ZrO2 and Ta2O5) mixture films were investigated for SAL. Among these films, NiFe-ZrO2 system is preferable because of its high Bs ρ value and low coercivity. The stability of the NiFe-ZrO2 system at 250°C was also investigated, which shows that Bs and ρ change by annealing and the changes are larger as ZrO2 content is larger. As for an application, MR devices which have 3.2 µm width and 2.8 µm height were fabricated and transfer curves were measured. The maximum output voltage of the device in which NiFe-12mol% ZrO2 was employed was 23% larger than the calculated value for the decice in which NiFe-Nb (Bs ρ=60 Tesla µΩcm) was assumed to be employed.

本文言語English
ページ(範囲)2633-2635
ページ数3
ジャーナルIEEE Transactions on Magnetics
31
6
DOI
出版ステータスPublished - 1995 11
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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