In order to improve the performance of Magnetoresistive heads, higher saturation flux density Bs and higher resistivity p are preferable for Soft Adjacent Layer (SAL). NiFe-oxide (oxide= SiO2, Al2O3, ZrO2 and Ta2O5) mixture films were investigated for SAL. Among these films, NiFe-ZrO2 system is preferable because of its high Bs ρ value and low coercivity. The stability of the NiFe-ZrO2 system at 250°C was also investigated, which shows that Bs and ρ change by annealing and the changes are larger as ZrO2 content is larger. As for an application, MR devices which have 3.2 µm width and 2.8 µm height were fabricated and transfer curves were measured. The maximum output voltage of the device in which NiFe-12mol% ZrO2 was employed was 23% larger than the calculated value for the decice in which NiFe-Nb (Bs ρ=60 Tesla µΩcm) was assumed to be employed.
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