抄録
A novel micromachining technique for silicon deep anisotropic etching using macroporous silicon is developed. Macroporous silicon is formed selectively in n-type substrates using silicon anodization in a hydrofluoric acid (HF)-based electrolyte with backside illumination. Three-dimensional microstructures are fabricated by removing the macroporous silicon in alkali solutions. This technique enables us to etch (100) n-type silicon with arbitrary shaped windows to produce high-aspect-ratio structures with vertical sidewalls using a wet etching process.
本文言語 | English |
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ページ(範囲) | 764-770 |
ページ数 | 7 |
ジャーナル | Journal of Micromechanics and Microengineering |
巻 | 15 |
号 | 4 |
DOI | |
出版ステータス | Published - 2005 4 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering