Mössbauer study on epitaxial CoxFe4- xN films grown by molecular beam epitaxy

Keita Ito, Tatsunori Sanai, Yoko Yasutomi, Toshiki Gushi, Kaoru Toko, Hideto Yanagihara, Masakiyo Tsunoda, Eiji Kita, Takashi Suemasu

研究成果: Article査読

6 被引用数 (Scopus)

抄録

We prepared CoxFe4- xN (x = 0, 1, 3) films on SrTiO3(STO)(001) substrates by molecular beam epitaxy. The epitaxial relationship with CoxFe4- xN[100](001) || STO[100](001) was confirmed by ω-2θ (out-of-plane) and ∅-2θχ(in-plane) x-ray diffraction (XRD) measurements. The degree of order of atoms (S) in the CoxFe4- xN films was estimated to be ∼0.5 by the peak intensity ratio of CoxFe4- xN(100) (superlattice diffraction line) to (400) (fundamental diffraction line) in the ∅-2θχXRD patterns. Conversion electron Mössbauer spectroscopy studies for the CoxFe4- xN films revealed that some N atoms are located at interstitial sites between the two nearest corner sites in the CoxFe4- xN films, and/or Fe atoms are located at both the corner and face-centered sites in the CoFe3N and Co3FeN films. In order to realize high spin-polarized CoxFe4- xN films having large S, further optimization of growth condition is required to prevent the site-disorders.

本文言語English
論文番号17B717
ジャーナルJournal of Applied Physics
117
17
DOI
出版ステータスPublished - 2015 5月 7

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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