Luminescence in SiO2 induced by MeV energy proton irradiation

S. Nagata, S. Yamamoto, K. Toh, B. Tsuchiya, N. Ohtsu, Tatsuo Shikama, H. Naramoto

研究成果: Conference article査読

27 被引用数 (Scopus)

抄録

Ion-induced luminescence was measured at room temperature for SiO 2 glasses with different OH concentration during irradiation by protons with 0.2-2 MeV energies. In addition to a prominent peak at 460 nm, characteristic peaks were detected at 390 and 650 nm, depending on the OH contents. For silica glasses with lower OH, the 390 nm luminescence appeared at a low dose and its intensity decreased quickly with an increase of the ion dose. The higher intensity for the 650 nm luminescence, related with the non-bridging oxygen hole centers, was found for higher OH concentration. On the other hand, the luminescence at 460 nm was not efficiently emitted from the silica glasses with higher OH when irradiated by MeV protons with low-electronic energy loss.

本文言語English
ページ(範囲)1507-1510
ページ数4
ジャーナルJournal of Nuclear Materials
329-333
1-3 PART B
DOI
出版ステータスPublished - 2004 8月 1
イベントProceedings of the 11th Conference on Fusion Research - Kyoto, Japan
継続期間: 2003 12月 72003 12月 12

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 材料科学(全般)
  • 原子力エネルギーおよび原子力工学

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