Luminescence characteristics of the LPE-grown undoped and In-doped ZnO thin films and bulk single crystals

Jan Pejchal, Y. Kagamitani, D. Ehrentraut, H. Sato, H. Odaka, H. Hatanaka, M. Nikl, A. Yoshikawa, H. Fukumura, T. Fukuda

研究成果: Conference article査読

10 被引用数 (Scopus)

抄録

The time-resolved emission spectroscopy using the fs-laser pulse and ps X-ray excitations was employed to compare the luminescence characteristics of the liquid phase epitaxy grown ZnO films and the hydrothermally grown single crystals. Reabsorption of the excitonic emission is demonstrated in the bulk ZnO. In the In-doped films the donor-acceptor pair recombination luminescence was evidenced above 400 nm and its decay was found to obey the t-1 law.

本文言語English
ページ(範囲)942-945
ページ数4
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
4
3
DOI
出版ステータスPublished - 2007 12 1
イベント10th Europhysical Conference on Defects in Insulating Materials, EURODIM 2006 - Milano, Italy
継続期間: 2006 7 102006 7 14

ASJC Scopus subject areas

  • 凝縮系物理学

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