LPE growth and scintillation properties of (Zn,Mg)O single crystalline film

Akira Yoshikawa, Takayuki Yanagida, Yutaka Fujimoto, Shunsuke Kurosawa, Yuui Yokota, Akihiro Yamaji, Makoto Sugiyama, Shingo Wakahara, Yoshisuke Futami, Masae Kikuchi, Miyuki Miyamoto, Hideyuki Sekiwa, Martin Nikl

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Among the direct wide band-gap semiconductors, ZnO is an attractive scintillator for alpha particle monitoring. However, the undoped ZnO has a dominant slow luminescence around 500-600 nm due to lattice defects. In this study, the Mg-substituted ZnO ((Zn,Mg)O) single crystalline films with high crystallinity are investigated. Mg doping is found to improve the lattice order and suppress slow luminescent component around 500-600 nm. (Zn,Mg)O single crystalline films were grown by the Liquid Phase Epitaxy (LPE) method. Alpha-ray excited radioluminescence spectra of (Zn,Mg)O film show only one emission peak around 400 nm and decay time of a few nanoseconds. This emission is assigned to free exciton. Light yield of LPE grown (Zn,Mg)O film is evaluated of about 90% of BGO.

本文言語English
論文番号6217290
ページ(範囲)2286-2289
ページ数4
ジャーナルIEEE Transactions on Nuclear Science
59
5 PART 2
DOI
出版ステータスPublished - 2012

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 原子力エネルギーおよび原子力工学
  • 電子工学および電気工学

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