TY - JOUR
T1 - LPE growth and scintillation properties of (Zn,Mg)O single crystalline film
AU - Yoshikawa, Akira
AU - Yanagida, Takayuki
AU - Fujimoto, Yutaka
AU - Kurosawa, Shunsuke
AU - Yokota, Yuui
AU - Yamaji, Akihiro
AU - Sugiyama, Makoto
AU - Wakahara, Shingo
AU - Futami, Yoshisuke
AU - Kikuchi, Masae
AU - Miyamoto, Miyuki
AU - Sekiwa, Hideyuki
AU - Nikl, Martin
N1 - Funding Information:
Manuscript received November 14, 2011; revised February 20, 2012; accepted March 23, 2012. Date of publication June 13, 2012; date of current version October 09, 2012. This work was supported in part by the funding program for next generation world-leading researchers, Japan Society for Promotion of Science (JSPS), JST Sentan, a Grant-in-Aid for Young Scientists (B)-15686001 and (A)-23686135 from the Ministry of Education, Culture, Sports, Science and Technology of the Japanese government (MEXT), and in part by Czech project for cz-jp collaboration MSMT, KONTAKT LH12150.
PY - 2012
Y1 - 2012
N2 - Among the direct wide band-gap semiconductors, ZnO is an attractive scintillator for alpha particle monitoring. However, the undoped ZnO has a dominant slow luminescence around 500-600 nm due to lattice defects. In this study, the Mg-substituted ZnO ((Zn,Mg)O) single crystalline films with high crystallinity are investigated. Mg doping is found to improve the lattice order and suppress slow luminescent component around 500-600 nm. (Zn,Mg)O single crystalline films were grown by the Liquid Phase Epitaxy (LPE) method. Alpha-ray excited radioluminescence spectra of (Zn,Mg)O film show only one emission peak around 400 nm and decay time of a few nanoseconds. This emission is assigned to free exciton. Light yield of LPE grown (Zn,Mg)O film is evaluated of about 90% of BGO.
AB - Among the direct wide band-gap semiconductors, ZnO is an attractive scintillator for alpha particle monitoring. However, the undoped ZnO has a dominant slow luminescence around 500-600 nm due to lattice defects. In this study, the Mg-substituted ZnO ((Zn,Mg)O) single crystalline films with high crystallinity are investigated. Mg doping is found to improve the lattice order and suppress slow luminescent component around 500-600 nm. (Zn,Mg)O single crystalline films were grown by the Liquid Phase Epitaxy (LPE) method. Alpha-ray excited radioluminescence spectra of (Zn,Mg)O film show only one emission peak around 400 nm and decay time of a few nanoseconds. This emission is assigned to free exciton. Light yield of LPE grown (Zn,Mg)O film is evaluated of about 90% of BGO.
KW - Crystalline materials
KW - epitaxial layers
KW - liquid phase epitaxy
KW - scintillator
KW - semiconductor films
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U2 - 10.1109/TNS.2012.2194743
DO - 10.1109/TNS.2012.2194743
M3 - Article
AN - SCOPUS:84867580754
SN - 0018-9499
VL - 59
SP - 2286
EP - 2289
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
IS - 5 PART 2
M1 - 6217290
ER -