Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication

Kaname Imokawa, Nozomu Tanaka, Akira Suwa, Daisuke Nakamura, Taizoh Sadoh, Tetsuya Goto, Hiroshi Ikenoue

研究成果: Conference contribution

1 引用 (Scopus)

抜粋

The electrical properties of poly-Si thin films doped using KrF excimer laser irradiation with a phosphoric-acid coating were investigated. After laser doping, the mobility, carrier concentration, activation ratio, and contact resistivity of the poly-Si were found to be 61 cm2 /Vs, 1.5×1018 cm-3, 18.1 %, and 8.5 × 10-5Ω.cm2, respectively. Additionally, the operation of a bottom gate transistor fabricated using laser doping was realized and is described herein.

元の言語English
ホスト出版物のタイトルLaser-Based Micro- and Nanoprocessing XIII
編集者Udo Klotzbach, Akira Watanabe, Rainer Kling
出版者SPIE
ISBN(電子版)9781510624542
DOI
出版物ステータスPublished - 2019 1 1
イベントLaser-Based Micro- and Nanoprocessing XIII 2019 - San Francisco, United States
継続期間: 2019 2 52019 2 7

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
10906
ISSN(印刷物)0277-786X
ISSN(電子版)1996-756X

Conference

ConferenceLaser-Based Micro- and Nanoprocessing XIII 2019
United States
San Francisco
期間19/2/519/2/7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • これを引用

    Imokawa, K., Tanaka, N., Suwa, A., Nakamura, D., Sadoh, T., Goto, T., & Ikenoue, H. (2019). Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication. : U. Klotzbach, A. Watanabe, & R. Kling (版), Laser-Based Micro- and Nanoprocessing XIII [109060J] (Proceedings of SPIE - The International Society for Optical Engineering; 巻数 10906). SPIE. https://doi.org/10.1117/12.2509141