Low Threshold Operation of 1.55 μm GalnAsP/lnP Dfb-Bh Lds Entirely Grown by Movpe on Inp Gratings

H. Yamada, T. Sasaki, S. Takano, T. Numai, M. Kitamura, I. Mito

研究成果: Article

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l.55 μm GalnAsP/lnP DFB-BH LDs on corrugated InP substrates were fabricated by only two-stage MOVPE, including burying layer growth. The 9 mA minimum threshold current was achieved with both facets cleaved, which the authors believe is the lowest among MOVPE grown DFB LDs with InP grating. Up to 20 mW maximum output power and 0.21W/A differential quantum efficiency were also attained under single longitudinal mode operation.

元の言語English
ページ(範囲)147-149
ページ数3
ジャーナルElectronics Letters
24
発行部数3
DOI
出版物ステータスPublished - 1988 1 1
外部発表Yes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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