Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glass

Masavoshi Esashi; Aklra Nakano; Shuichi Shoji; Hiroyuki Hebiguchi

doi:10.1109/9780470545263.sect11

Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glass

Masavoshi Esashi, Aklra Nakano, Shuichi Shoji, Hiroyuki Hebiguchi

マイクロシステム融合研究開発センター

研究成果: Chapter

抄録

Room-temperature silicon-to-silicon bonding has been performed. It is an electrostatic bonding using sputtered low melting point glass as an intermediate layer. Wafers can be bonded at room temperature with an applied voltage of about 50 V. This technique is useful for the fabrication of intelligent sensors and microelectromechanical systems.

本文言語	English
ホスト出版物のタイトル	Micromechanics and MEMS
ホスト出版物のサブタイトル	Classic and Seminal Papers to 1990
出版社	Wiley-IEEE Press
ページ	588-591
ページ数	4
ISBN（電子版）	9780470545263
ISBN（印刷版）	0780310853, 9780780310858
DOI	https://doi.org/10.1109/9780470545263.sect11
出版ステータス	Published - 1997 1 1

ASJC Scopus subject areas

Computer Science(all)
Engineering(all)
Physics and Astronomy(all)
Energy(all)

文献へのアクセス

10.1109/9780470545263.sect11

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引用スタイル

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