Low temperature silicon surface cleaning by hf etching/ultraviolet ozone cleaning (hf/uvoc) method (ii)–in situ uvoc

Tetsuya Kaneko, Maki Suemitsu, Nobuo Miyamoto

研究成果: Article査読

34 被引用数 (Scopus)

抄録

A new method to obtain clean silicon surfaces using a thermal treatment at as low as 700°C is proposed. The method consists of an ex situ treatment of HF dipping followed by a rinse in distilled, deionized water and in situ treatments of both UVOC under low oxygen pressure and annealing in vacuo. From the Arrhenius plot of the removal rate of the surface oxide, two mechanisms corresponding to a diffusion of the volatile product, SiO, and a reaction between oxygen and silicon are suggested to exist, with activation energies 3.7 eV and 1.9 eV, respectively.

本文言語English
ページ(範囲)2425-2429
ページ数5
ジャーナルJapanese journal of applied physics
28
12 R
DOI
出版ステータスPublished - 1989 12

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Low temperature silicon surface cleaning by hf etching/ultraviolet ozone cleaning (hf/uvoc) method (ii)–in situ uvoc」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル