Low-temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environment

Junichi Murota, Naoto Nakamura, Manabu Kato, Nobuo Mikoshiba, Tadahiro Ohmi

研究成果: Article査読

132 被引用数 (Scopus)

抄録

An ultraclean hot-wall low-pressure chemical vapor deposition (CVD) system was developed and Si films were deposited on single-crystal Si and SiO 2 using ultraclean SiH4 and H2 gases in the temperature range 600-850°C under an ultraclean environment. As a result of ultraclean processing, an incubation period of Si deposition only on SiO 2 was found, and low-temperature Si selective deposition and epitaxy on Si were achieved without addition of HCl under deposition conditions where only nonselective polycrystalline Si growth could be obtained in conventional CVD systems.

本文言語English
ページ(範囲)1007-1009
ページ数3
ジャーナルApplied Physics Letters
54
11
DOI
出版ステータスPublished - 1989 12 1

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Low-temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environment」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル