Low-temperature resistivity and susceptibility of the low-carrier density, one-dimensional S = 1/2 antiferromagnet Yb4As3

P. Gegenwart, T. Cichorek, J. Custers, M. Lang, H. Aoki, A. Ochiai, F. Steglich

研究成果: Article査読

6 被引用数 (Scopus)

抄録

We report on low-T (T ≥ 0.02K) measurements of the electrical resistivity, p(T, B), and the magnetic AC-susceptibility, Χac (T, B), on the low-carrier density, one-dimensional S = 1/2 antiferromagnet Yb 4As3 in magnetic fields B ≤ 19 T. For 2 K ≤ T ≤ 20K we find ρ - ρ0 = AT20: residual resistivity), with a large coefficient A ≈ 0.75 μΩcm/K 2 followed by a minimum around 1K and a 0.1 % increase for T → 0. In finite fields and below about 5 K, ρ(T, B) shows a historydependent hysteretic behavior. The oscillatory behavior superimposed is attributed to the Shubnikov-de Haas effect arising from a low density of mobile As-p holes. For T ≥ 0.4 K, Χac (T) follows the prediction of the quantum sine-Gordon model. A cusp-like anomaly is found at 0.15 K.

本文言語English
ページ(範囲)630-632
ページ数3
ジャーナルJournal of Magnetism and Magnetic Materials
226-230
PART I
DOI
出版ステータスPublished - 2001
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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