Low-temperature reaction of CH4 on Si(1 0 0)

A. Izena, M. Sakuraba, T. Matsuura, J. Murota

研究成果: Article査読

30 被引用数 (Scopus)

抄録

Surface reaction of CH4 on the Si(1 0 0) epitaxial surface was investigated in the low-temperature region of 500-750°C at 50-1600 Pa for 7-240 min using an ultraclean vertical-type hot-wall LPCVD system. In the case of the CH4 exposure at ≥650°C, the reacted C atom diffused into Si and a SiC layer was formed. At ≤550°C, CH4 reacted with Si only at the surface without apparent diffusion, and the 4-fold periodic structure toward the [0 0 1] azimuth was formed on the surface. At 600°C, with increasing exposure time, the 4-fold periodic structure was initially formed and then disappeared and the diffraction spots of SiC appeared, which indicates substantial diffusion of the reacted C atom into Si. Furthermore, at ≤600°C, the reacted C atom concentration at the outermost surface was normalized with the product of the CH4 pressure and the exposure time, and was expressed by the Langmuir-type rate equation.

本文言語English
ページ(範囲)131-136
ページ数6
ジャーナルJournal of Crystal Growth
188
1-4
DOI
出版ステータスPublished - 1998 6 1

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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