TY - JOUR
T1 - Low-temperature reaction of CH4 on Si(1 0 0)
AU - Izena, A.
AU - Sakuraba, M.
AU - Matsuura, T.
AU - Murota, Junichi
N1 - Funding Information:
This study was carried out in the superclean room of the Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University. The CVD reactor was provided by Kokusai Electric Co., Ltd. This study was partially supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science, Sports and Culture of Japan, the Research for the Future (No. JSPS-RFTF96R13101) from the Japan Society for Promotion of Science.
PY - 1998/6/1
Y1 - 1998/6/1
N2 - Surface reaction of CH4 on the Si(1 0 0) epitaxial surface was investigated in the low-temperature region of 500-750°C at 50-1600 Pa for 7-240 min using an ultraclean vertical-type hot-wall LPCVD system. In the case of the CH4 exposure at ≥650°C, the reacted C atom diffused into Si and a SiC layer was formed. At ≤550°C, CH4 reacted with Si only at the surface without apparent diffusion, and the 4-fold periodic structure toward the [0 0 1] azimuth was formed on the surface. At 600°C, with increasing exposure time, the 4-fold periodic structure was initially formed and then disappeared and the diffraction spots of SiC appeared, which indicates substantial diffusion of the reacted C atom into Si. Furthermore, at ≤600°C, the reacted C atom concentration at the outermost surface was normalized with the product of the CH4 pressure and the exposure time, and was expressed by the Langmuir-type rate equation.
AB - Surface reaction of CH4 on the Si(1 0 0) epitaxial surface was investigated in the low-temperature region of 500-750°C at 50-1600 Pa for 7-240 min using an ultraclean vertical-type hot-wall LPCVD system. In the case of the CH4 exposure at ≥650°C, the reacted C atom diffused into Si and a SiC layer was formed. At ≤550°C, CH4 reacted with Si only at the surface without apparent diffusion, and the 4-fold periodic structure toward the [0 0 1] azimuth was formed on the surface. At 600°C, with increasing exposure time, the 4-fold periodic structure was initially formed and then disappeared and the diffraction spots of SiC appeared, which indicates substantial diffusion of the reacted C atom into Si. Furthermore, at ≤600°C, the reacted C atom concentration at the outermost surface was normalized with the product of the CH4 pressure and the exposure time, and was expressed by the Langmuir-type rate equation.
KW - 4-fold periodic structure
KW - CH
KW - Diffusion of C
KW - Langmuir-type
KW - Si(1 0 0) surface
KW - Surface reaction
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U2 - 10.1016/S0022-0248(98)00076-1
DO - 10.1016/S0022-0248(98)00076-1
M3 - Article
AN - SCOPUS:0032097685
VL - 188
SP - 131
EP - 136
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -