Low-temperature processing of lead zirconate titanate thin films by 28 GHz microwave irradiation for MEMS application

Z. J. Wang, H. Kokawa, H. Takizawa, M. Ichiki, R. Maeda

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

Pb(ZrxTi1-x)O3 (PZT) thin films were coated on Pt/Ti/SiO2/Si substrates by a sol-gel method and then crystallized by 28 GHz microwave irradiation. The crystalline phases and microstructures as well as the electrical properties of the microwave-irradiated PZT films were investigated as a function of the elevated temperature generated by microwave irradiation. X-ray diffraction analysis indicated that the PZT films crystallized well into the perovskite phase at an elevated temperature of 480°C by microwave irradiation. Scanning electron microscopy images showed that the films had a granular grain structure and most of the grains were approximately 1.5 μm in size. With increasing the elevated temperature from 480°C to 600°C by microwave irradiation, the breadth of grain boundaries of the films became narrow and the remanent polarization of the films increased lightly. It is clear that microwave irradiation is effective for obtaining well-crystallized PZT films with good properties at low temperatures in a short time.

本文言語English
ホスト出版物のタイトルSmart Materials IV
DOI
出版ステータスPublished - 2007
イベントSPIE International Symposium on Smart Materials, Nano- and Micro-Smart Systems - Adelaide, Australia
継続期間: 2006 12月 112006 12月 13

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
6413
ISSN(印刷版)0277-786X

Other

OtherSPIE International Symposium on Smart Materials, Nano- and Micro-Smart Systems
国/地域Australia
CityAdelaide
Period06/12/1106/12/13

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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