Low temperature processing of alkoxide-derived PMN thin films

Tomoya Ohno, Yasunori Gotoh, Naonori Sakamoto, Naoki Wakiya, Takanori Kiguchi, Takeshi Matsuda, Hisao Suzuki

研究成果: Conference article査読

2 被引用数 (Scopus)

抄録

A well-crystallized Pb(Mg 1/3Nb 2/3)O 3 (PMN) thin film on a Si wafer was prepared using low-temperature processing with a LaNiO 3 (LNO) seeding layer. The PMN thin film was crystallized at 550 °C on a LNO/Si stacking structure. Additionally, we attempted to apply the compressive residual stress to PMN layers for a Curie temperature shift. Results show that the ferroelectric property remained at room temperature. The remanent polarization increased concomitantly with increasing annealing temperature.

ASJC Scopus subject areas

  • 材料科学(全般)
  • 工学(全般)

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