A well-crystallized Pb(Mg 1/3Nb 2/3)O 3 (PMN) thin film on a Si wafer was prepared using low-temperature processing with a LaNiO 3 (LNO) seeding layer. The PMN thin film was crystallized at 550 °C on a LNO/Si stacking structure. Additionally, we attempted to apply the compressive residual stress to PMN layers for a Curie temperature shift. Results show that the ferroelectric property remained at room temperature. The remanent polarization increased concomitantly with increasing annealing temperature.
|ジャーナル||IOP Conference Series: Materials Science and Engineering|
|出版ステータス||Published - 2012|
|イベント||European Materials Research Society (EMRS) Fall Meeting 2011 Symposium K: Solution-Derived Electronic-Oxide Films Nanostructures and Patterning, from Materials to Devices - Warsaw, Poland|
継続期間: 2011 9 19 → 2011 9 23
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