Low temperature oxidation of CVD SiC by electron cyclotron resonance plasma

Takashi Goto, Hiroshi Masumoto, Mineo Niizuma

研究成果: Conference article査読

3 被引用数 (Scopus)

抄録

The oxidation behavior in electron cyclotron resonance (ECR) plasma-enhanced oxygen plasma for Si- and C-faces of CVD SiC was studied at 398-873 K. In pure O2 gas, the oxidation kinetics are parabolic and logarithmic for the C- and Si-faces, respectively. Monolithic amorphous SiO2 layers were formed on the Si-face, but mixtures of outer SiO2 and inner Si-C-O layers were observed on the C-face. In an Ar-O2 gas mixture, there was no difference in oxidation behavior between Si- and C-faces. The oxidation kinetics were linear, and nano-meter size crystalline Si particles were found dispersed in the amorphous SiO2 layers.

本文言語English
ページ(範囲)235-240
ページ数6
ジャーナルMaterials Chemistry and Physics
75
1-3
DOI
出版ステータスPublished - 2002 4 28
イベントICMAT 2001 Symposium C (Novel and Advanced Ceramics) - Singapore, Singapore
継続期間: 2002 4 28 → …

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学

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