The influences of the grain boundary traps on poly-Si TFT device characteristics were evaluated in detail by examining the low temperature device characteristics. It was found that the threshold voltage significantly increases and the field effect mobility considerably decreases at the low temperature because the influences of the grain boundary traps become more pronounced. As a result, the drain current is strikingly reduced when the temperature is decreased. Meanwhile, the kink effect is suppressed at the low temperature due to the increased influences of the grain boundary traps. The hydrogenation treatment mitigated the drain current reduction at the low temperature and enhanced the kink effect.
|出版ステータス||Published - 1991 1月 1|
|イベント||23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn|
継続期間: 1991 8月 27 → 1991 8月 29
|Other||23rd International Conference on Solid State Devices and Materials - SSDM '91|
|Period||91/8/27 → 91/8/29|
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