Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As

A. Shen, F. Matsukura, S. P. Guo, Y. Sugawara, H. Ohno, M. Tani, H. Abe, H. C. Liu

研究成果: Conference article査読

37 被引用数 (Scopus)

抄録

GaAs and (Ga, Mn)As were grown by low-temperature (LT) MBE. In this paper we report the growth condition dependence of properties of LT GaAs and (Ga,Mn)As. Transient reflectivity measurements showed that the carrier lifetime in LT GaAs can be modified by changing the V/III ratio. The Curie temperature of (Ga,Mn)As, determined by magneto-transport measurements, was also shown to be a function of V/III ratio.

本文言語English
ページ(範囲)679-683
ページ数5
ジャーナルJournal of Crystal Growth
201
DOI
出版ステータスPublished - 1999 5
イベントProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
継続期間: 1998 8 311998 9 4

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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