Low-temperature, low-pressure and ultrahigh-rate growth of single-crystalline 3C-SiC on Si substrate by ULP-CVD using organosilane

Eiji Saito, Sergey Filimonov, Maki Suemitsu

研究成果: Conference contribution

2 引用 (Scopus)

抜粋

Temperature dependence of the growth rate of 3C-SiC(001) films on Si(001) substrates during ultralow-pressure (ULP: ~10-1 Pa) CVD using monomethylsilane has been investigated in detail by using pyrometric interferometry. A novel behavior, i.e. a sharp division of the growth mode into two regimes depending on the growth temperature, has been found to exist. Based on this finding, we have developed a two-step process, which realizes a low-temperature (900 °C), high-rate growth of single-crystalline 3C-SiC film on Si substrates, whose rate of 3 μm/h is extremely high for this ULP process.

元の言語English
ホスト出版物のタイトルSilicon Carbide and Related Materials 2009
ホスト出版物のサブタイトルICSCRM 2009
出版者Trans Tech Publications Ltd
ページ147-150
ページ数4
ISBN(印刷物)0878492798, 9780878492794
DOI
出版物ステータスPublished - 2010 1 1
イベント13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany
継続期間: 2009 10 112009 10 16

出版物シリーズ

名前Materials Science Forum
645-648
ISSN(印刷物)0255-5476
ISSN(電子版)1662-9752

Other

Other13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
Germany
Nurnberg
期間09/10/1109/10/16

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

フィンガープリント Low-temperature, low-pressure and ultrahigh-rate growth of single-crystalline 3C-SiC on Si substrate by ULP-CVD using organosilane' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Saito, E., Filimonov, S., & Suemitsu, M. (2010). Low-temperature, low-pressure and ultrahigh-rate growth of single-crystalline 3C-SiC on Si substrate by ULP-CVD using organosilane. : Silicon Carbide and Related Materials 2009: ICSCRM 2009 (pp. 147-150). (Materials Science Forum; 巻数 645-648). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.645-648.147