Low-temperature large-grain poly-Si direct deposition by microwave plasma enhanced chemical vapor deposition using SiH4/Xe

Wataru Shindo, Shigefumi Sakai, Hiroaki Tanaka, Chuan Jie Zhong, Tadahiro Ohmi

    研究成果: Article査読

    13 被引用数 (Scopus)

    抄録

    Polycrystalline silicon is grown at a temperature of 300 °C by microwave-excited plasma enhanced chemical vapor deposition using SiH4/Xe. The grain size measured by x-ray diffraction is about 25 nm. High-density (> 1012 cm-3) plasma having very low electron temperature (<1 eV) is excited by microwave irradiation using radial line slot antenna. We present the implementation of this system for the growth of poly-Si. Low-energy (3 eV), high-flux ion bombardment utilizing xenon ion on a growing film surface activates the film surface and successfully enhances surface reaction/migration of silicon, resulting in high quality film formation at low temperatures.

    本文言語English
    ページ(範囲)3134-3138
    ページ数5
    ジャーナルJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    17
    5
    DOI
    出版ステータスPublished - 1999 1 1

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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