Low-temperature large-grain poly-Si direct deposition by microwave plasma enhanced chemical vapor deposition using SiH4/Xe

Wataru Shindo, Shigefumi Sakai, Hiroaki Tanaka, Chuan Jie Zhong, Tadahiro Ohmi

研究成果: Article査読

13 被引用数 (Scopus)

抄録

Polycrystalline silicon is grown at a temperature of 300 °C by microwave-excited plasma enhanced chemical vapor deposition using SiH4/Xe. The grain size measured by x-ray diffraction is about 25 nm. High-density (> 1012 cm-3) plasma having very low electron temperature (<1 eV) is excited by microwave irradiation using radial line slot antenna. We present the implementation of this system for the growth of poly-Si. Low-energy (3 eV), high-flux ion bombardment utilizing xenon ion on a growing film surface activates the film surface and successfully enhances surface reaction/migration of silicon, resulting in high quality film formation at low temperatures.

本文言語English
ページ(範囲)3134-3138
ページ数5
ジャーナルJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
17
5
DOI
出版ステータスPublished - 1999
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜

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