抄録
Polycrystalline silicon is grown at a temperature of 300 °C by microwave-excited plasma enhanced chemical vapor deposition using SiH4/Xe. The grain size measured by x-ray diffraction is about 25 nm. High-density (> 1012 cm-3) plasma having very low electron temperature (<1 eV) is excited by microwave irradiation using radial line slot antenna. We present the implementation of this system for the growth of poly-Si. Low-energy (3 eV), high-flux ion bombardment utilizing xenon ion on a growing film surface activates the film surface and successfully enhances surface reaction/migration of silicon, resulting in high quality film formation at low temperatures.
本文言語 | English |
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ページ(範囲) | 3134-3138 |
ページ数 | 5 |
ジャーナル | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
巻 | 17 |
号 | 5 |
DOI | |
出版ステータス | Published - 1999 |
外部発表 | はい |
ASJC Scopus subject areas
- 凝縮系物理学
- 表面および界面
- 表面、皮膜および薄膜