The oxidation of InGaAs and the mechanisms underlying this process were investigated using a low-energy oxygen neutral beam. The thickness of the oxide layer and the components of In, O, Ga, and As were examined by cross-sectional transmission electron microscopy (TEM) and X-ray photoemission spectroscopy (XPS). Extending the oxidation duration together with the use of a high indium concentration generated a thicker InGaAs oxide layer because of the difference in chemical bond strength. The oxidation of InGaAs, which was successful even at room temperature, resulted in a high-quality interface because of the highly reactive neutral beam and its extremely low activation energy.
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