Low-temperature InGaAs oxidation using oxygen neutral beam

Chang Yong Lee, Akio Higo, Cédric Thomas, Takeru Okada, Takuya Ozaki, Masakazu Sugiyama, Yoshiaki Nakano, Seiji Samukawa

研究成果: Article査読

1 被引用数 (Scopus)

抄録

The oxidation of InGaAs and the mechanisms underlying this process were investigated using a low-energy oxygen neutral beam. The thickness of the oxide layer and the components of In, O, Ga, and As were examined by cross-sectional transmission electron microscopy (TEM) and X-ray photoemission spectroscopy (XPS). Extending the oxidation duration together with the use of a high indium concentration generated a thicker InGaAs oxide layer because of the difference in chemical bond strength. The oxidation of InGaAs, which was successful even at room temperature, resulted in a high-quality interface because of the highly reactive neutral beam and its extremely low activation energy.

本文言語English
論文番号070305
ジャーナルJapanese journal of applied physics
57
7
DOI
出版ステータスPublished - 2018 7

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Low-temperature InGaAs oxidation using oxygen neutral beam」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル