Low-temperature heteroepitaxial growth of 3C-SiC(111) on Si(110) substrate using monomethylsilane

Atsushi Konno, Yuzuru Narita, Takashi Ito, Kanji Yasui, Hideki Nakazawa, Tetsuo Endoh, Maki Suemitsu

研究成果: Conference article査読

16 被引用数 (Scopus)


Heteroepitaxial growth of 3C-SiC on Si(110) substrate has been successfully conducted at T=1000°C by using monomethylsilane as a single source gas. X-ray diffraction (XRD) reveals that the growth orientation of the film is rotated and a 3C-SiC(111) film is formed on this Si(110) substrate. The film quality, as evaluated with the half width of the XRD rocking curve, shows improvement from that of 3C-SiC(111)/Si(111) film. The lattice constant anisotropy (a∥-a⊥)/a∥ between the lateral and the growth directions also decreased by a factor of four from that of 3C-SiC(111)/Si(111), and the two lattice constants approach to that of bulk SC-SiC. These results indicate significant reduction in the strain of the 3C-SiC film in this 3C-SiC(111)/Si(110) system. XRD φ-scan indicates presence of double domains with almost equal areas. Copyright The Electrochemical Society.

ジャーナルECS Transactions
出版ステータスPublished - 2006 12 1
イベントState-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7 - 210th Electrochemical Society Meeting - Cancun, Mexico
継続期間: 2006 10 292006 11 3

ASJC Scopus subject areas

  • Engineering(all)

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