Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure

M. Matsumoto, Y. Inayoshi, M. Suemitsu, E. Miyamoto, T. Yara, S. Nakajima, T. Uehara, Y. Toyoshima

研究成果: Article査読

7 被引用数 (Scopus)

抄録

Silicon nitride (SiN X ) film fabrication on polyethylene terephthalate (PET) substrates has been achieved at a low temperature (∼100 °C) by plasma enhanced chemical vapor deposition operated at near atmospheric pressures. A short-pulse based power system was employed to maintain a stable discharge of SiH 4 , H 2 and N 2 in near atmospheric pressures without the use of any inert gases such as He. The deposited films were characterized by X-ray photoelectron spectroscopy. Cross sections of the films were observed by scanning electron microscope (SEM). Despite the use of N 2 in place of NH 3 , a high deposition rate (290 nm/min) was obtained by this near-atmospheric-pressure plasma.

本文言語English
ページ(範囲)6208-6210
ページ数3
ジャーナルApplied Surface Science
254
19
DOI
出版ステータスPublished - 2008 7 30

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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