Low temperature formation of low resistivity W contact with ultra thin mixed layer on molecular layer epitaxially-grown GaAs

F. Matsumoto, J. I. Nishizawa, Y. Oyama, P. Plotka, Y. Oshida, K. Suto

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

The precursor for the W CVD on GaAs used is W(CO)6. The contact resistance in W/GaAs is obtained by the transmission line measurements of patterned W on heavily doped GaAs grown by MLE. The dependence of the contact resistance on the surface treatment prior to the W CVD is also studied. Barrier height of W/GaAs structure is measured by the temperature dependence of I-V characteristics in reference to the contact resistance. The W/GaAs interface is analyzed using SIMS and RBS. Contact resistance of non-alloyed structure achieved are 3×10-2 ω cm2 for n-type GaAs and below 5×10-8 ω cm2 for p-type respectively. From the physical analysis, the mixed layer in W/GaAs interface is estimated less than 20 Å.

本文言語English
ホスト出版物のタイトルProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
編集者Mike Melloch, Mark A. Reed
出版社Institute of Electrical and Electronics Engineers Inc.
ページ179-182
ページ数4
ISBN(印刷版)0780338839, 9780780338838
DOI
出版ステータスPublished - 1997 1 1
イベント24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States
継続期間: 1997 9 81997 9 11

出版物シリーズ

名前Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Other

Other24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
国/地域United States
CitySan Diego
Period97/9/897/9/11

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料

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