Low-temperature epitaxial growth of CaF 2 on (NH 4 ) 2 S x -treated GaAs(100) surface

Daisei Shoji, Michio Niwano, Nobuo Miyamoto

研究成果: Article査読

1 被引用数 (Scopus)

抄録

We have investigated the method of forming a high-quality CaF 2 film onto a GaAs(100) surface. We used X-ray diffractometry and Rutherford backscattering spectrometry to characterize the film quality. We demonstrate that pretreatment of GaAs wafer surfaces by (NH 4 ) 2 S X solution leads to the epitaxial growth of CaF 2 on the GaAs(100) surface at a substrate temperature of around 200°C, We suggest that both oxide removal by (NH 4 ) 2 S x etching and sulfur passivation of the surface are crucial to the low-temperature epitaxial growth of CaF 2 . At a substrate temperature of 300°C, the epitaxy quality of CaF 2 is deteriorated.

本文言語English
ページ(範囲)443-446
ページ数4
ジャーナルApplied Surface Science
117-118
DOI
出版ステータスPublished - 1997 6月 2

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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