Low-temperature epitaxial growth of CaF                         2                          on (NH                         4                         )                         2                         S                         x                         -treated GaAs(100) surface

Daisei Shoji; Michio Niwano; Nobuo Miyamoto

doi:10.1016/S0169-4332(97)80122-5

Low-temperature epitaxial growth of CaF ₂ on (NH ₄ ) ₂ S _x -treated GaAs(100) surface

Daisei Shoji, Michio Niwano, Nobuo Miyamoto

電気通信研究所・人間情報システム研究部門

研究成果: Article › 査読

1 被引用数 (Scopus)

抄録

We have investigated the method of forming a high-quality CaF ₂ film onto a GaAs(100) surface. We used X-ray diffractometry and Rutherford backscattering spectrometry to characterize the film quality. We demonstrate that pretreatment of GaAs wafer surfaces by (NH ₄ ) ₂ S _X solution leads to the epitaxial growth of CaF ₂ on the GaAs(100) surface at a substrate temperature of around 200°C, We suggest that both oxide removal by (NH ₄ ) ₂ S _x etching and sulfur passivation of the surface are crucial to the low-temperature epitaxial growth of CaF ₂ . At a substrate temperature of 300°C, the epitaxy quality of CaF ₂ is deteriorated.

本文言語	English
ページ（範囲）	443-446
ページ数	4
ジャーナル	Applied Surface Science
巻	117-118
DOI	https://doi.org/10.1016/S0169-4332(97)80122-5
出版ステータス	Published - 1997 6月 2

ASJC Scopus subject areas

化学 (全般)
凝縮系物理学
物理学および天文学（全般）
表面および界面
表面、皮膜および薄膜

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10.1016/S0169-4332(97)80122-5

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Shoji, D., Niwano, M., & Miyamoto, N. (1997). Low-temperature epitaxial growth of CaF ₂ on (NH ₄ ) ₂ S _x -treated GaAs(100) surface Applied Surface Science, 117-118, 443-446. https://doi.org/10.1016/S0169-4332(97)80122-5

Low-temperature epitaxial growth of CaF ₂ on (NH ₄ ) ₂ S _x -treated GaAs(100) surface . / Shoji, Daisei; Niwano, Michio; Miyamoto, Nobuo.

In: Applied Surface Science, Vol. 117-118, 02.06.1997, p. 443-446.

研究成果: Article › 査読

Shoji, D, Niwano, M & Miyamoto, N 1997, ' Low-temperature epitaxial growth of CaF ₂ on (NH ₄ ) ₂ S _x -treated GaAs(100) surface ', Applied Surface Science, vol. 117-118, pp. 443-446. https://doi.org/10.1016/S0169-4332(97)80122-5

Shoji D, Niwano M, Miyamoto N. Low-temperature epitaxial growth of CaF ₂ on (NH ₄ ) ₂ S _x -treated GaAs(100) surface Applied Surface Science. 1997 6月 2;117-118:443-446. doi: 10.1016/S0169-4332(97)80122-5

Shoji, Daisei ; Niwano, Michio ; Miyamoto, Nobuo. / Low-temperature epitaxial growth of CaF ₂ on (NH ₄ ) ₂ S _x -treated GaAs(100) surface In: Applied Surface Science. 1997 ; Vol. 117-118. pp. 443-446.

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abstract = " We have investigated the method of forming a high-quality CaF 2 film onto a GaAs(100) surface. We used X-ray diffractometry and Rutherford backscattering spectrometry to characterize the film quality. We demonstrate that pretreatment of GaAs wafer surfaces by (NH 4 ) 2 S X solution leads to the epitaxial growth of CaF 2 on the GaAs(100) surface at a substrate temperature of around 200°C, We suggest that both oxide removal by (NH 4 ) 2 S x etching and sulfur passivation of the surface are crucial to the low-temperature epitaxial growth of CaF 2 . At a substrate temperature of 300°C, the epitaxy quality of CaF 2 is deteriorated. ",

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Low-temperature epitaxial growth of CaF 2 on (NH 4 ) 2 S x -treated GaAs(100) surface

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Low-temperature epitaxial growth of CaF ₂ on (NH ₄ ) ₂ S _x -treated GaAs(100) surface