Photon-stimulated desorption (PSD) of H+ ions from the HF-passivated Si(111) surface, whichis terminated with hydrogen, has been studied using synchrotron radiation. Desorption of H+ ions due to Si-H bond breaking is observed at photon energies above 17 eV. A distinct dependence of the H+-PSD yield on the angle of incidence of a photon beam also is observed. It is found that the H+-PSDyield correlates well with the photoabsorbance. The present results suggest the feasibility of cleaning the HF-passivated Si(111) surface at low-temperature by means of irradiation of vacuum-ultraviolet (VUV) light.
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