We present the basic low-temperature characteristics of SiO 2/Si/SiO2 Hall-bar devices, where each Hall-bar arm is split into p- and n-type Ohmic contacts made by selective area ion-implantation doping of boron and phosphorus, respectively. Magnetotransport measurements of a 22-nm-thick Si(001) quantum well show Shubnikov-de Haas oscillations of two-dimensional holes in addition to the electrons generated at both sides of the quantum well. We discuss applications for extracting the physical characteristics of this technologically vital material system.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2007 4 24|
ASJC Scopus subject areas
- Physics and Astronomy(all)