Low-temperature characteristics of ambipolar SiO2/Si/SiO 2 Hall-bar devices

Kei Takashina, Benjamin Gaillard, Yukinori Ono, Yoshiro Hirayama

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We present the basic low-temperature characteristics of SiO 2/Si/SiO2 Hall-bar devices, where each Hall-bar arm is split into p- and n-type Ohmic contacts made by selective area ion-implantation doping of boron and phosphorus, respectively. Magnetotransport measurements of a 22-nm-thick Si(001) quantum well show Shubnikov-de Haas oscillations of two-dimensional holes in addition to the electrons generated at both sides of the quantum well. We discuss applications for extracting the physical characteristics of this technologically vital material system.

本文言語English
ページ(範囲)2596-2598
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
46
4 B
DOI
出版ステータスPublished - 2007 4 24

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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