Low resistive ALD TiN metal gate using TDMAT precursor for high performance MOSFET

T. Hayashida, K. Endo, Y. X. Liu, T. Kamei, T. Matsukawa, S. Ouchi, K. Sakamoto, J. Tsukada, Y. Ishikawa, H. Yamauchi, A. Ogura, M. Masahara

研究成果: Conference contribution

抄録

We have demonstrated the effect of the resistivity reduction of the ALD-TiN film using TDMAT precursor by modifying the NH3 process (both initial exposure and PDA processes). It was found that the resistivity of the ALD TiN was significantly reduced by extending tNH3 and increasing TPDA by 700°C. Moreover, by employing the NH3 PDA, an increase in TiN peak intensity was detected from Ti 2p by XPS analysis and Ti : N ratio of approximately 1:1 was achieved. As a result of the evaluation of the electrical characteristics of TiN-gate MOSFETs, superior performance was achieved in the case of ALD TiN.

本文言語English
ホスト出版物のタイトル2010 Silicon Nanoelectronics Workshop, SNW 2010
DOI
出版ステータスPublished - 2010 10 22
外部発表はい
イベント2010 15th Silicon Nanoelectronics Workshop, SNW 2010 - Honolulu, HI, United States
継続期間: 2010 6 132010 6 14

出版物シリーズ

名前2010 Silicon Nanoelectronics Workshop, SNW 2010

Other

Other2010 15th Silicon Nanoelectronics Workshop, SNW 2010
CountryUnited States
CityHonolulu, HI
Period10/6/1310/6/14

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

フィンガープリント 「Low resistive ALD TiN metal gate using TDMAT precursor for high performance MOSFET」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル