Low resistance and high thermal stability of spin-dependent tunnel junctions with synthetic antiferromagnetic CoFe/Ru/CoFe pinned layers

J. J. Sun, K. Shimazawa, N. Kasahara, K. Sato, S. Saruki, T. Kagami, O. Redon, S. Araki, H. Morita, M. Matsuzaki

研究成果: Article査読

65 被引用数 (Scopus)

抄録

In this work, submicron-size (down to 0.273 μm2) spin-dependent tunnel junctions with resistance as low as ∼30 Ω μm2 have been fabricated, where the tunneling barrier of AlOx was formed by in situ natural oxidation. These junctions annealed at 250°C for 5 h showed tunneling magnetoresistance (TMR) of 14.3% and 25.8% for the pinned layers of CoFe/RuRhMn and CoFe/ PtMn, respectively, while the TMR is further increased to 31.6% for a synthetic antiferromagnetic pinned layer of CoFe/Ru/CoFe/PtMn due to less interdiffusion at CoFe/Ru interface. The investigation has indicated that the growth of ultrathin Al layer is very sensitive to the surface roughness of bottom ferromagnetic electrode, and large surface roughness leads to small junction resistance.

本文言語English
ページ(範囲)2424-2426
ページ数3
ジャーナルApplied Physics Letters
76
17
DOI
出版ステータスPublished - 2000 4 24
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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