Low-pressure metalorganic chemical vapor deposition of a Cu Ga Se 2/Cu Al Se 2 heterostructure

Shigefusa Chichibu, Ryo Sudo, Nobuhide Yoshida, Yoshiyuki Harada, Mei Uchida, Satoru Matsumoto

研究成果: Article査読

16 被引用数 (Scopus)

抄録

A single-heterostructure of CuGaSe2/CuAlSe2 chalcopyrite semiconductors was successfully grown epitaxially on a GaAs(001) substrate using a low-pressure metal organic chemical vapor deposition technique. The valence-band discontinuity for the CuGaSe2/CuAlSe2 heterointerface was estimated to be 0.8±0.1 eV by means of X-ray photoelectron spectroscopy. The CuGaSe2/CuAlSe2 structure was found to have the straddling-type heterointerface, and the band discontinuity was found to be distributed mainly in the valence band.

本文言語English
ページ(範囲)L286-L289
ジャーナルJapanese journal of applied physics
33
3
DOI
出版ステータスPublished - 1994 3月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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