Low-power and high-sensitivity magnetoresistive random access memory sensing scheme with body-biased preamplifier

Takeaki Sugimura, Jun Deguchi, Hoon Choi, Takeshi Sakaguchi, Hyuckjae Oh, Takafumi Fukushima, Mitsumasa Koyanagi

研究成果: Article査読

2 被引用数 (Scopus)

抄録

In this paper, we describe a new magnetoresistive random access memory (MRAM) sensing scheme with a body-biased preamplifier for low-power and high-sensitivity operation. The proposed new MRAM sense amplifier consists of a current sense preamplifier with a body biasing differential pair of a common-gate amplifier and a voltage sense amplifier. The preamplifier controls bitline voltage appropriately and amplifies the difference in bitline current as current-mode sense amplifier. The new sense amplifier enhances sensitivity, and the body-biased preamplifier enables low-voltage operation. To evaluate the proposed circuit, the modeling of magnetic tunnel junction (MTJ) resistance characteristics was performed with a VHDL-AMS description, and the proposed circuit was simulated with a mixed signal circuit simulator. From the simulation result, it is confirmed that the proposed sensing scheme results in a 1.57 times faster access time than a conventional scheme, and that the power of the sense amplifier is lower than that of the conventional amplifier at the same speed.

本文言語English
ページ(範囲)3321-3325
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
4 B
DOI
出版ステータスPublished - 2006 4 25

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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